HiSIM-LDMOS Chosen as International Standard Model
Date :Jan 21, 2008
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The transistor model "HiSIM-LDMOS," developed by Hiroshima University and the Semiconductor Technology Academic Research Center (STARC), and supported by the Ministry of Economy, Trade, and Industry/New Energy and Industrial Technology Development Organization (NEDO), was the first model developed in Japan to be chosen as the international standard by the international standardization organization, the Compact Model Council (CMC).
Using this model will improve the precision of semiconductor circuit simulations. This, for example, will enable design optimization of semiconductor LSI with on board high-pressure resistant transistors, used in information appliances, etc, and it is expected to reduce energy consumption, among other effects.
Professor Mitiko Miura (Head of the HiSIM Research Center) of Hiroshima University's Graduate School of Advanced Sciences of Matter, has led research and development of the above model.
For inquiries regarding this article, please contact the following:
Ms. Chieko Aoyama
Tel:082-424-5860, Fax: 082-424-5890
E-mail: gakujutu-kkacho (at) office.hiroshima-u.ac.jp
Mr. Yoshiharu Furui
Semiconductor Technology Academic Research Center
Tel: 045-478-3272, Fax: 045-478-3310
E-mail: furui.yoshiharu (at) starc.or.jp
Please change "at" to the appropriate mark.