Japanese

The startup Material Gate, based in Hiroshima and led by CEO Yuki Nakano, aims to bring Professor Sadafumi Nishihara's research on "single-molecule dielectrics" into practical application. It has been selected for the Deep Tech Startup Support Fund/Deep Tech Startup Support Program (DTSU Program) organized by the New Energy and Industrial Technology Development Organization (NEDO), a national research and development agency.

Out of a total of 55 applications, only 11 were selected, and this marks the first selection of a Hiroshima University-based venture for this program (as of December 2024).

This program targets "deep tech startups" engaged in the research and development of innovative technologies. While these technologies require long-term research, significant funding, and carry high risks, they are considered instrumental in addressing economic and social challenges on a national and global scale. The program provides support for practical application research and development, mass production trials, and overseas technology demonstrations.
This time, Material Gate was selected for the "STS Phase (Practical Application Research and Development: Early Stage)" and has secured a grant of 280 million yen for a two-year project period.
With this grant, the company plans to conduct joint research with Hiroshima University to verify the practical application of single-molecule dielectric memory. Single-molecule dielectric is a material first successfully developed by Professor Yoshifumi Nishihara, and when used in computer memory, it can increase data storage density by more than 1,000 times compared to conventional products.
In today's world, where the demand for large-capacity storage continues to grow, Material Gate's single-molecule dielectric memory holds the potential to revolutionize the digital industry.

～ Comments from Professor Nishihara ～

Hiroshima University has developed a "single-molecule dielectric," a new memory material that exhibits ferroelectricity within just one molecule. This discovery overturns conventional understanding of ferroelectric materials and is gaining attention for its potential to break through the performance limits of current memory technologies. As a first step, this research aims to create a single-molecule dielectric memory device with future practical application and mass production in mind, and to demonstrate its value to society.